منابع مشابه
Power MOSFET Basics
Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) in high frequency applications where switching power losses are dominant. They can be paralleled b...
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Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Most power MOSFETs feature a vertical structure with Source and Drain on opposite sides of the wafer in order to support higher current and voltage. Figure 1a and 1b show the basic device structure...
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A new compact physics-based Alpha-Power Law MOSFET Model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original Alpha-Power Law Model with their physical origins. The new model, verified by HSPICE simulations and measured data, includes: 1) a subthreshold region of operation for eva...
متن کاملA MOSFET Power Amplifier with Error Correction*
The rapid evolution of power MOSFETs during the last few years has brought them to the point where they are now very attractive for use in audio amplifier power output stages. Important improvements include in creased voltage, current, and dissipation ratings, re duced "on" resistance, availability of complementary pairs, and greatly reduced cost. Although a 75-W MOSFET is still more expensiv...
متن کامل“ Switched Biasing ” reduces both MOSFET 1 / f Noise and Power Consumption
“Switched Biasing” is proposed as a new circuit technique that exploits an intriguing physical effect: cycling a MOS transistor between strong inversion and accumulation reduces its intrinsic 1/f noise. The technique is implemented in a 0.8μm CMOS sawtooth oscillator by periodically off-switching of the bias currents during time intervals that they are not contributing to the circuit operation....
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ژورنال
عنوان ژورنال: Undergraduate Journal of Mathematical Modeling: One + Two
سال: 2013
ISSN: 2326-3652
DOI: 10.5038/2326-3652.2.2.11